发明名称 |
COPPER ANODE OR PHOSPHORUS-CONTAINING COPPER ANODE, METHOD FOR ELECTROPLATING COPPER ON SEMICONDUCTOR WAFER, AND SEMICONDUCTOR WAFER WITH PARTICLE NOT SIGNIFICANTLY DEPOSITED THEREON |
摘要 |
Provided is a copper anode or a phosphorous-containing copper anode for use in performing electroplating copper on a semiconductor wafer, wherein purity of the copper anode or the phosphorous-containing copper anode excluding phosphorous is 99.99wt% or higher, and silicon as an impurity is 10wtppm or less. Additionally provided is an electroplating copper method capable of effectively preventing the adhesion of particles on a plating object, particularly onto a semiconductor wafer during electroplating copper, a phosphorous-containing copper anode for use in such electroplating copper, and a semiconductor wafer comprising a copper layer with low particle adhesion formed by the foregoing copper electroplating. |
申请公布号 |
EP2213772(A4) |
申请公布日期 |
2012.01.11 |
申请号 |
EP20080843371 |
申请日期 |
2008.10.06 |
申请人 |
JX NIPPON MINING & METALS CORPORATION |
发明人 |
AIBA, AKIHIRO;TAKAHASHI, HIROFUMI |
分类号 |
C25D17/10;C22C9/00;C25D7/12;H01L21/288 |
主分类号 |
C25D17/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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