SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
摘要
<p>PURPOSE: A semiconductor device and a formation method thereof are provided to apply one or more wet etching processes and a single photo process exposing a second region, thereby arranging conductive patterns in a step structure with a low price. CONSTITUTION: A substrate(110) comprises a first region(R1) and a second region(R2) which is located adjacent to the first region. A well region(112) is arranged by supplying impurity ions of a first conductive type within the substrate of the first region. A first material film(123) and a second material film(125) which are different from each other are arranged in order to be alternatively laminated on the substrate. A mask pattern exposing a partial area of the second region is arranged on a material film of the uppermost layer. The first material films and second material films in the partial area exposed by the mask pattern are wet etched in order to arrange a step type laminated pattern in which lateral and upper surfaces of the second material films are exposed.</p>
申请公布号
KR20120003677(A)
申请公布日期
2012.01.11
申请号
KR20100064410
申请日期
2010.07.05
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
KANG, DAE HYUK;BAE, SANG WON;YOON, BO UN;LEE, KUN TACK;KIM, YOUNG HOO