发明名称 |
A MULTI-STATE SPIN-TORQUE TRANSFER MAGNETIC RANDOM ACCESS MEMORY |
摘要 |
<p>A multi-state spin-torque transfer magnetic random access memory (STTMRAM) is formed on a film and includes a first magnetic tunneling junctions (MTJ) having a first fixed layer, a first sub-magnetic tunnel junction (sub-MTJ) layer and a first free layer. The first fixed layer and first free layer each have a first magnetic anisotropy. The STTMRAM further includes a non-magnetic spacing layer formed on top of the first MTJ layer and a second MTJ formed on top of the non-magnetic spacing layer. The second MTJ has a second fixed layer, a second sub-MTJ layer and a second free layer. The second fixed and second free layers each have a second magnetic anisotropy, wherein at least one of the first or second magnetic anisotropy is perpendicular to the plane of the film.</p> |
申请公布号 |
EP2404296(A1) |
申请公布日期 |
2012.01.11 |
申请号 |
EP20090841258 |
申请日期 |
2009.08.26 |
申请人 |
AVALANCHE TECHNOLOGY, INC. |
发明人 |
RANJAN, RAJIV YADAV;KESHTBOD, PARVIZ |
分类号 |
G11C11/15;G11C11/16;G11C11/56;H01L27/22;H01L43/08 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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