发明名称 |
FORMATION OF RAISED SOURCE/DRAIN ON A STRAINED THIN FILM IMPLANTED WITH COLD AND/OR MOLECULAR CARBON |
摘要 |
<p>A method is disclosed for enhancing tensile stress in the channel region of a semiconductor structure. The method includes performing one or more cold-carbon or molecular carbon ion implantation steps to implant carbon ions within the semiconductor structure to create strain layers on either side of a channel region. Raised source/drain regions are then formed above the strain layers, and subsequent ion implantation steps are used to dope the raised source/drain region. A millisecond anneal step activates the strain layers and the raised source/drain regions. The strain layers enhances carrier mobility within a channel region of the semiconductor structure, while the raised source/drain regions minimize reduction in strain in the strain layer caused by subsequent implantation of dopant ions in the raised source/drain regions.</p> |
申请公布号 |
KR20120003494(A) |
申请公布日期 |
2012.01.10 |
申请号 |
KR20117028385 |
申请日期 |
2010.04.23 |
申请人 |
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. |
发明人 |
HATEM CHRISTOPHER R.;MAYNARD HELEN L.;RAMAPPA DEEPAK |
分类号 |
H01L21/336;H01L21/265;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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