发明名称 |
Semiconductor device and its driving method |
摘要 |
A semiconductor device having a thyristor SCR with reduced turn-off time. A third semiconductor region of the second conductivity type (anode AN) and a fourth semiconductor region of the first conductivity type (anode gate AG) are formed in the top layer of a first semiconductor region; fifth semiconductor region of the first conductivity type (cathode CA) and sixth semiconductor region of the second conductivity type (cathode gate CG) are formed in the top layer of a second semiconductor region; a gate insulating film and gate electrode MG are formed on the second semiconductor region. When the thyristor is turned off from the on state, a higher potential than that on the anode is applied to the anode gate, and a diode made up of the anode and the anode gate inside the thyristor is made to conduct so as to control the potential of the anode during driving. |
申请公布号 |
US8093622(B2) |
申请公布日期 |
2012.01.10 |
申请号 |
US20080184436 |
申请日期 |
2008.08.01 |
申请人 |
KAWAHARA HIDEAKI;SATOH TOSHIMI;TANI TOSHIYUKI;TEXAS INSTRUMENTS INCORPORATED |
发明人 |
KAWAHARA HIDEAKI;SATOH TOSHIMI;TANI TOSHIYUKI |
分类号 |
H01L29/47 |
主分类号 |
H01L29/47 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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