发明名称 |
Method of fabricating gate electrode using a hard mask with spacers |
摘要 |
A method for fabricating a semiconductor device is disclosed. In an embodiment, the method may include providing a semiconductor substrate; forming gate material layers over the semiconductor substrate; forming a hard mask layer over the gate material layers; patterning the hard mask layer to from a hard mask pattern; forming a spacer layer over the hard mask pattern; etching back the spacer layer to form spacers over sidewalls of the hard mask pattern; etching the gate material layers by using the spacers and the hard mask pattern as an etching mask to form a gate structure; and performing a tilt-angle ion implantation process to the semiconductor substrate. |
申请公布号 |
US8093146(B2) |
申请公布日期 |
2012.01.10 |
申请号 |
US20100725814 |
申请日期 |
2010.03.17 |
申请人 |
WANG SHIANG-BAU;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
WANG SHIANG-BAU |
分类号 |
H01L21/3205;H01L21/4763 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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