| 摘要 |
This semiconductor device has an MOS transistor equipped with a gate electrode formed on a semiconductor substrate, a source region next to one side of the gate electrode, and a drain region next to another side of the gate electrode, wherein an upper end of the source region and an upper end of the drain region are at positions which are higher than a top surface of the semiconductor substrate, and the height of the upper end of the drain region differs from the height of the upper end of the source region. |
