发明名称 Semiconductor structure and method of forming the same
摘要 A semiconductor structure and a method of forming the same are provided. The semiconductor structure includes a substrate, a resistor and a metal gate structure. The substrate has a first area and a second area. The resistor is disposed in the first area, wherein the resistor does not include any metal layer. The metal gate structure is disposed in the second area.
申请公布号 US8093118(B2) 申请公布日期 2012.01.10
申请号 US20090493074 申请日期 2009.06.26
申请人 TSENG KUN-SZU;HSU CHE-HUA;FAN CHENG-WEN;TSENG CHIH-YU;LIANG VICTOR CHIANG;UNITED MICROELECTRONICS CORP. 发明人 TSENG KUN-SZU;HSU CHE-HUA;FAN CHENG-WEN;TSENG CHIH-YU;LIANG VICTOR CHIANG
分类号 H01L21/337;H01L21/20;H01L21/8234 主分类号 H01L21/337
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