发明名称 |
Semiconductor structure and method of forming the same |
摘要 |
A semiconductor structure and a method of forming the same are provided. The semiconductor structure includes a substrate, a resistor and a metal gate structure. The substrate has a first area and a second area. The resistor is disposed in the first area, wherein the resistor does not include any metal layer. The metal gate structure is disposed in the second area. |
申请公布号 |
US8093118(B2) |
申请公布日期 |
2012.01.10 |
申请号 |
US20090493074 |
申请日期 |
2009.06.26 |
申请人 |
TSENG KUN-SZU;HSU CHE-HUA;FAN CHENG-WEN;TSENG CHIH-YU;LIANG VICTOR CHIANG;UNITED MICROELECTRONICS CORP. |
发明人 |
TSENG KUN-SZU;HSU CHE-HUA;FAN CHENG-WEN;TSENG CHIH-YU;LIANG VICTOR CHIANG |
分类号 |
H01L21/337;H01L21/20;H01L21/8234 |
主分类号 |
H01L21/337 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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