发明名称 |
Non-volatile memory device and method for fabricating the same |
摘要 |
A non-volatile memory device and a method for fabricating the same are provided. The method includes: forming a gate structure on a substrate, the gate structure including a first insulation layer, a first electrode layer for a floating gate and a second insulation layer; forming a third insulation layer on the gate structure covering predetermined regions of the substrate adjacent to the gate structure; and forming a second electrode layer for a control gate on the third insulation layer disposed on sidewalls of the gate structure and the predetermined regions of the substrate. |
申请公布号 |
US8093631(B2) |
申请公布日期 |
2012.01.10 |
申请号 |
US20080228211 |
申请日期 |
2008.08.11 |
申请人 |
JEONG YONG-SIK;MAGNACHIP SEMICONDUCTOR, LTD. |
发明人 |
JEONG YONG-SIK |
分类号 |
H01L27/148;H01L27/108;H01L29/80 |
主分类号 |
H01L27/148 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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