发明名称 |
Wafer grounding methodology |
摘要 |
An apparatus for increasing electric conductivity to a wafer substrate, when exposed to electron beam irradiation, is disclosed. More specifically, a methodology to breakdown the insulating layer on wafer backside is provided to significantly reduce the damage on the wafer backside while proceeding with the grounding process. |
申请公布号 |
US8094428(B2) |
申请公布日期 |
2012.01.10 |
申请号 |
US20080259216 |
申请日期 |
2008.10.27 |
申请人 |
WANG YI XIANG;DOU JUYING;KANAI KENICHI;JIANG JUN;FAN ZHENG;MENG QINGYU;CHEN JAY;HERMES-MICROVISION, INC. |
发明人 |
WANG YI XIANG;DOU JUYING;KANAI KENICHI;JIANG JUN;FAN ZHENG;MENG QINGYU;CHEN JAY |
分类号 |
H01L21/683 |
主分类号 |
H01L21/683 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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