发明名称 Systems with a gate dielectric having multiple lanthanide oxide layers
摘要 Electronic systems and methods of forming the electronic systems include a gate dielectric having multiple lanthanide oxide layers. Such electronic systems may be used in a variety of electronic system applications. A dielectric film having a layer of a lanthanide oxide and a layer of another lanthanide oxide provides a reliable gate dielectric with an equivalent oxide thickness thinner than attainable using SiO2.
申请公布号 US8093638(B2) 申请公布日期 2012.01.10
申请号 US20070621401 申请日期 2007.01.09
申请人 AHN KIE Y.;FORBES LEONARD;MICRON TECHNOLOGY, INC. 发明人 AHN KIE Y.;FORBES LEONARD
分类号 H01L29/76;H01L21/28;H01L21/316;H01L29/51;H01L29/78 主分类号 H01L29/76
代理机构 代理人
主权项
地址