发明名称 |
Semiconductor device and method of fabricating the same |
摘要 |
A semiconductor device. The device includes an active region isolated by an isolation structure on a substrate, and a dielectric layer overlying the active region and the isolation structure. The dielectric layer comprises a lower part overlying the active region beyond the boundary of the active region and the isolation structure, and a protruding part overlying the boundary of the active region and the isolation structure. |
申请公布号 |
US8093678(B2) |
申请公布日期 |
2012.01.10 |
申请号 |
US20070783067 |
申请日期 |
2007.04.05 |
申请人 |
LU CHING-SHAN;LAI FENG-LIANG;HORNG SHEAN-REN;TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LU CHING-SHAN;LAI FENG-LIANG;HORNG SHEAN-REN |
分类号 |
H01L21/762;H01L21/70 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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