发明名称 Semiconductor device and method of fabricating the same
摘要 A semiconductor device. The device includes an active region isolated by an isolation structure on a substrate, and a dielectric layer overlying the active region and the isolation structure. The dielectric layer comprises a lower part overlying the active region beyond the boundary of the active region and the isolation structure, and a protruding part overlying the boundary of the active region and the isolation structure.
申请公布号 US8093678(B2) 申请公布日期 2012.01.10
申请号 US20070783067 申请日期 2007.04.05
申请人 LU CHING-SHAN;LAI FENG-LIANG;HORNG SHEAN-REN;TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 LU CHING-SHAN;LAI FENG-LIANG;HORNG SHEAN-REN
分类号 H01L21/762;H01L21/70 主分类号 H01L21/762
代理机构 代理人
主权项
地址