A PROCESS FOR PRODUCING SILICON CARBIDE (SIC) NANOWIRES ON A SILICON SUBSTRATE

摘要

This invention relates to a process for producing a large amount of silicon carbide (SiC) nanowires (20) on a silicon wafer (10) through direct reaction between silicon and carbon sources without the use of any metallic catalyst and with advantage of direct integration of nanowires onto the silicon (Si) substrate, which enables device fabrication. Said process includes placing a silicon substrate (10) and a crucible (14) filled with 0.5g to 1.0g of carbon powder (12) into a furnace (18); creating a vacuum in the furnace (18) between 20 to 40 mTorr; introducing argon gas into the furnace (18); heating the furnace (18) to a reaction temperature between 1200 °C and 1350 °C; and cooling the furnace (18) to room temperature.