| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a rear incidence type semiconductor photo-detector capable of improving frequency characteristics without damaging assembling workability, an optical reception module having the same, and an optical transceiver. <P>SOLUTION: The rear incidence type semiconductor photo-detector 18 comprises a rectangle Fe-doped InP substrate 1; a light-receiving mesa part 2 formed on a center part on one side (upper side) on a surface of the substrate, and having a PN junction part receiving incidence light from a rear surface of the substrate; a p-type electrode 4 formed on an upper surface of the light-receiving mesa part 2 and electrically connected to one side of the PN junction part; an N-type electrode mesa part 9 formed on one corner part on one side (upper side) on the surface of the substrate; an N-type electrode 5 extending to an upper surface of the N-type electrode mesa part 9 and electrically connected to the other side of the PN junction; a P-type electrode mesa part 8 and a dummy electrode mesa part 10 formed in region including other three corners on the surface of the substrate; and a dummy electrode 6 formed on an upper surface of the dummy electrode mesa part 10. <P>COPYRIGHT: (C)2012,JPO&INPIT |
