| 摘要 |
<p>Disclosed is a film forming method comprising a titanium film-forming step wherein a titanium film is formed on an interlayer insulating film (520) and a silicon-containing surface (512) on the bottom of a contact hole (530), a nitriding step wherein a single titanium nitride film (550) is formed by nitriding the entire titanium film, and a tungsten film-forming step wherein a tungsten film (560) is formed on the titanium nitride film. Consequently, the productivity can be improved by forming a barrier film thinner than the conventional ones, while preventing separation of a tungsten film due to deterioration of a titanium layer.</p> |
