发明名称 MANUFACTURING METHOD OF SUBSTRATE HAVING PATTERNS AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a substrate having patterns, capable of controlling the interval of adjacent film patterns and controlling the widths of the film patterns to form particularly thick patterns with a small width; a manufacturing method of a substrate having a highly-electromotive conduction film with little variation in antenna inductance; and a manufacturing method of a semiconductor device with a high yield. <P>SOLUTION: Film patterns are formed by forming a film in which silicon and oxygen are coupled and an inactive group is coupled with the silicon on a substrate and an insulation or conduction film, printing a composition by a printing method on a surface of the film in which silicon and oxygen are coupled and the inactive group is coupled with the silicon, and then baking the composition. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012004570(A) 申请公布日期 2012.01.05
申请号 JP20110134205 申请日期 2011.06.16
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 AOKI TOMOYUKI;ORIKI KOJI
分类号 H05K3/12;H01B5/14;H01B13/00;H01L21/288;H01L21/312;H01L21/3205;H01L21/336;H01L21/768;H01L29/786;H05K1/09 主分类号 H05K3/12
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