Method of making a semiconductor device, and semiconductor device made thereby

摘要

A semiconductor device comprises a semiconductor substrate (110) having a patterned interconnect layer (120) formed thereon. A first capacitor (210), a second capacitor (220), and a resistor (230) are formed over the interconnect layer. The first capacitor comprises a layer of electrode material and a first number of dielectric layers. The second capacitor comprises the layer of electrode material and a second number of dielectric layers. The first number of dielectric layers is greater than he second number of dielectric layers such that the first capacitor has a higher capacitance per unit area than does the second capacitor.