METHOD FOR PRODUCING SAPPHIRE SINGLE CRYSTAL, SAPPHIRE SUBSTRATE, AND SEMICONDUCTOR LIGHT EMITTING ELEMENT

摘要

Aluminum oxide and an additive that contains an oxide of an additional element composed of at least one element selected from among silicon, germanium and tin are introduced into a crucible (15), while setting the weight concentration of the additive within the range of 30-500 ppm relative to the aluminum oxide, and after obtaining an alumina melt (35) by melting the aluminum oxide and the additive in the crucible (15), a sapphire ingot (30) that contains the aluminum oxide and the additive and has a sapphire single crystal structure is pulled up from the alumina melt (35) in the crucible (15). The thus-pulled up sapphire ingot (30) has a weight concentration of the additional element of 2-80 ppm relative to the aluminum oxide. Consequently, there can be provided a sapphire single crystal ingot having a small strain, a sapphire substrate, and a high quality semiconductor light emitting element that is obtained by forming a compound semiconductor layer on a sapphire substrate.