发明名称 PLASMA PROCESSING APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To stabilize the power transmission on a surface of an upper electrode with high reliability when the power to be supplied to the upper electrode has high frequency. <P>SOLUTION: In a plasma processing apparatus having a chamber in which an upper electrode and a lower electrode are provided to face each other, the atmosphere (in a coaxial tube) between the upper electrode and a chamber wall covering the upper electrode is set to an inert gas atmosphere of positive pressure and the upper electrode and the chamber wall covering the upper electrode are set to have a coaxial shape. The upper electrode is preferably connected electrically to a matching box, and the inert gas atmosphere is preferably cooled. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012004108(A) 申请公布日期 2012.01.05
申请号 JP20110106983 申请日期 2011.05.12
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 NOZAWA TAICHI
分类号 H05H1/46;C23C16/509;H01L21/205;H01L21/31 主分类号 H05H1/46
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