发明名称 SINGLE TRANSISTOR MEMORY CELL
摘要 A semiconductor device along with circuits including same and methods of operating same are disclosed. In one particular embodiment, the device may comprise a memory cell including a transistor. The transistor may comprise a gate, an electrically floating body region, and a source region and a drain region adjacent the body region. Data stored in memory cells of the device may be refreshed during hold operations.
申请公布号 US2012002467(A1) 申请公布日期 2012.01.05
申请号 US201113225318 申请日期 2011.09.02
申请人 OKHONIN SERGUEI;NAGOGA MIKHAIL;MICRON TECHNOLOGY, INC. 发明人 OKHONIN SERGUEI;NAGOGA MIKHAIL
分类号 G11C11/34;G11C11/402 主分类号 G11C11/34
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