发明名称 |
SINGLE TRANSISTOR MEMORY CELL |
摘要 |
A semiconductor device along with circuits including same and methods of operating same are disclosed. In one particular embodiment, the device may comprise a memory cell including a transistor. The transistor may comprise a gate, an electrically floating body region, and a source region and a drain region adjacent the body region. Data stored in memory cells of the device may be refreshed during hold operations. |
申请公布号 |
US2012002467(A1) |
申请公布日期 |
2012.01.05 |
申请号 |
US201113225318 |
申请日期 |
2011.09.02 |
申请人 |
OKHONIN SERGUEI;NAGOGA MIKHAIL;MICRON TECHNOLOGY, INC. |
发明人 |
OKHONIN SERGUEI;NAGOGA MIKHAIL |
分类号 |
G11C11/34;G11C11/402 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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