发明名称 CONTROL APPARATUS FOR PLASMA IMMERSION ION IMPLANTATION OF A DIELECTRIC SUBSTRATE
摘要 <p>A control apparatus for plasma immersion ion implantation of a dielectric substrate which includes an electrode disposed above a generated plasma in a plasma chamber. The electrode is biased with negative voltage pulses at a potential that is higher than a potential of a substrate or cathode configured to receive ion implantation. The electrode is more negative to give the electrons generated as secondary electrons from the electrode sufficient energy to overcome the negative voltage of the high voltage sheath around the substrate thereby reaching the substrate. These electrons are accelerated toward the substrate to neutralize charge build-up on the substrate.</p>
申请公布号 WO2012003339(A1) 申请公布日期 2012.01.05
申请号 WO2011US42623 申请日期 2011.06.30
申请人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.;MILLER, TIMOTHY, J.;SINGH, VIKRAM;GODET, LUDOVIC;LEAVITT, CHRISTOPHER, J. 发明人 MILLER, TIMOTHY, J.;SINGH, VIKRAM;GODET, LUDOVIC;LEAVITT, CHRISTOPHER, J.
分类号 H01J37/32 主分类号 H01J37/32
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