发明名称 POWER AMPLIFIER CIRCUIT
摘要 PURPOSE: A power amplification circuit is provided to improve cross isolation between a low frequency combining device and a high frequency combining device by constituting an inductance or an LC resonance circuit. CONSTITUTION: A power amplification circuit(100) comprises a power amplifying unit(110), a joint unit(120), an isolating unit(130), and a shielding unit(140). The power amplifying unit amplifies the level of an input signal according to a fixed gain. A differential signal, which is amplified in the power amplifying unit, is transmitted to the high frequency power combining device(121) or the low frequency power combining device(122) of the joint unit according to a frequency bandwidth. The isolating unit includes a blocking unit(131) which blocks a frequency interference between a second power line and a first power source line. The shield unit is able to shield a harmonic component in the even number degree of an output signal.
申请公布号 KR101101693(B1) 申请公布日期 2011.12.30
申请号 KR20100090081 申请日期 2010.09.14
申请人 SAMSUNG ELECTRO-MECHANICS CO., LTD. 发明人 KIM, KI JOONG;KIM, YOUN SUK;KIM, SEONG GEUN;WON, JUN GOO;NAM, JOONG JIN
分类号 H03F3/20;H03F3/60 主分类号 H03F3/20
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