Nonvolatile semiconductor memory device comprising ion conducting layer and methods of manufacturing and operating the same,申请号KR20050078038-传众专利搜索

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发明名称	Nonvolatile semiconductor memory device comprising ion conducting layer and methods of manufacturing and operating the same
摘要
申请公布号	KR101100427(B1)	申请公布日期	2011.12.30
申请号	KR20050078038	申请日期	2005.08.24
申请人		发明人
分类号	H01L27/115	主分类号	H01L27/115
代理机构		代理人
主权项
地址

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