| 发明名称 |
THYRISTOR RANDOM ACCESS MEMORY DEVICE AND METHOD |
| 摘要 |
Memory devices and methods of making memory devices are shown. Methods and configurations as shown provide folded and vertical memory devices for increased memory density. Methods provided reduce a need for manufacturing methods such as deep dopant implants. |
| 申请公布号 |
US2011316042(A1) |
申请公布日期 |
2011.12.29 |
| 申请号 |
US20100826323 |
申请日期 |
2010.06.29 |
| 申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
TANG SANH D.;ZAHURAK JOHN K.;VIOLETTE MICHAEL P. |
| 分类号 |
H01L29/74;H01L21/332 |
主分类号 |
H01L29/74 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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