发明名称 SPUTTERING TARGET, OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE
摘要 A sputtering target including an oxide sintered body, the oxide sintered body containing indium (In) and at least one element selected from gadolinium (Gd), dysprosium (Dy), holmium (Ho), erbium (Er) and ytterbium (Yb), and the oxide sintered body substantially being of a bixbyite structure.
申请公布号 US2011315936(A1) 申请公布日期 2011.12.29
申请号 US20080532247 申请日期 2008.02.28
申请人 INOUE KAZUYOSHI;YANO KOKI;KASAMI MASASHI;IDEMITSU KOSAN CO., LTD. 发明人 INOUE KAZUYOSHI;YANO KOKI;KASAMI MASASHI
分类号 C01F17/00;C01B35/00;C01F5/00;C01F7/02;C01G15/00;C01G51/04;C01G53/04;C23C14/34;H01B1/08 主分类号 C01F17/00
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