| 发明名称 |
PROCESS TO MAKE HIGH-K TRANSISTOR DIELECTRICS |
| 摘要 |
A method of reducing impurities in a high-k dielectric layer comprising the following steps. A substrate is provided. A high-k dielectric layer having impurities is formed over the substrate. The high-k dielectric layer being formed by an MOCVD or an ALCVD process. The high-k dielectric layer is annealed to reduce the impurities within the high-k dielectric layer.
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| 申请公布号 |
US2011318915(A1) |
申请公布日期 |
2011.12.29 |
| 申请号 |
US201113224059 |
申请日期 |
2011.09.01 |
| 申请人 |
YAO LIANG-GI;WANG MING-FANG;CHEN SHIH-CHANG;LIANG MONG-SONG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
YAO LIANG-GI;WANG MING-FANG;CHEN SHIH-CHANG;LIANG MONG-SONG |
| 分类号 |
H01L21/28;B82Y40/00 |
主分类号 |
H01L21/28 |
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