STRAINED-CHANNEL FIELD-EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

A strained-channel field-effect transistor and a manufacturing method thereof are provided. The transistor includes a substrate (14), source/drain regions (15, 16), a channel, a gate dielectric layer (17), and a gate (18), wherein L-shaped composite isolation layers are arranged between the source/drain regions and the substrate, and covering the bottoms of the source/drain regions and a part of the side faces of the source/drain regions adjacent to the channel, and each of the L-shaped composite isolation layers is composed of an L-shaped thin isolation layer (20) contacting with the substrate directly, and an L-shaped high stress layer (21) contacting with the source or drain region directly. Since the high stress layer can induce strain in the channel, the carrier mobility of the transistor can be increased. At the same time, since the thin isolation layer can prevent a leakage current to the channel, the ability of suppressing the short-channel effect is improved.