发明名称 |
SUBSTRATE PROCESSING METHOD |
摘要 |
There is provided a substrate processing method capable of preventing the decrease in etching efficiency by positive ions and increasing the overall etching efficiency by using negative ions. The substrate processing method includes applying a plasma RF and a bias RF in the pattern of a pulse wave, respectively. The substrate processing method repeatedly performs the steps of: (3b) etching a substrate by positive ions in plasma by applying both the plasma RF and the bias RF; (3c) generating negative ions in a processing chamber by stopping the application of both the plasma RF and the bias RF; and (3a) attracting the negative ions to the substrate by applying the bias RF and stopping the application of the plasma RF. A duty ratio of the bias RF is set to be greater than a duty ratio of the plasma RF. |
申请公布号 |
US2011318933(A1) |
申请公布日期 |
2011.12.29 |
申请号 |
US201113165951 |
申请日期 |
2011.06.22 |
申请人 |
YATSUDA KOICHI;MOCHIKI HIROMASA;TOKYO ELECTRON LIMITED |
发明人 |
YATSUDA KOICHI;MOCHIKI HIROMASA |
分类号 |
H01L21/3065 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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