FORMING MEMORY USING HIGH POWER IMPULSE MAGNETRON SPUTTERING
摘要
Forming memory using high power impulse magnetron sputtering is described herein. One or more method embodiments include forming a resistive memory material on a structure using high power impulse magnetron sputtering (HIPIMS), wherein the resistive memory material is formed on the structure in an environment having a temperature of approximately 400 degrees Celsius or less.
申请公布号
US2011315543(A1)
申请公布日期
2011.12.29
申请号
US20100825091
申请日期
2010.06.28
申请人
HU YONGJUN JEFF;MCTEER EVERETT A.;SMYTHE, III JOHN A.;SANDHU GURTEJ S.;MICRON TECHNOLOGY, INC.
发明人
HU YONGJUN JEFF;MCTEER EVERETT A.;SMYTHE, III JOHN A.;SANDHU GURTEJ S.