THIN FILM SILICON SOLAR CELL AND PROCESS FOR PRODUCTION THEREOF

摘要

A process for producing a thin film silicon solar cell (11A) comprising a step of forming a first electrode (3) on a substrate, a step of laminating an n-type silicon layer (5An), an i-type silicon layer (5Ai) and a p-type silicon layer (5Ap) on the first electrode (3) by a technique in which a solution containing polysilane is applied in the form of a pattern under an inert gas atmosphere and the pattern is dried to thereby form a silicon layer (5A), and a step of forming a second electrode (8) on the silicon layer (5A), wherein, in the step of forming the silicon layer (5A), at least one layer selected from the n-type silicon layer (5An), the i-type silicon layer (5Ai) and the p-type silicon layer (5Ap) is subjected to a dangling bond reduction treatment. It is possible to provide a process for producing a thin film silicon solar cell employing a coating method, which can produce the solar cell in a simple manner and does not undergo the increase in dangling bonds in a silicon layer.