| 发明名称 |
FLEXIBLE FERROELECTRIC MEMORY DEVICE AND MANUFACTURING METHOD FOR THE SAME |
| 摘要 |
The present disclosure relates to a flexible nonvolatile ferroelectric memory device, a 1T-1R (1Transistor-1Resistor) flexible ferroelectric memory device, and a manufacturing method for the same. |
| 申请公布号 |
US2011316059(A1) |
申请公布日期 |
2011.12.29 |
| 申请号 |
US201113115268 |
申请日期 |
2011.05.25 |
| 申请人 |
AHN JONG-HYUN;RHO JONGHYUN;SUNGKYUNKWAN UNIVERSITY FOUNDATION FOR CORPORATE COLLABORATION |
发明人 |
AHN JONG-HYUN;RHO JONGHYUN |
| 分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
| 代理机构 |
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