| 发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME |
| 摘要 |
The objective of the present invention is to provide a semiconductor device of a hetero-junction field effect transistor that is capable of obtaining a high output and a high breakdown voltage and a manufacturing method of the same. The present invention is a semiconductor device of a hetero junction field effect transistor provided with an AlxGa1-xN channel layer with a composition ratio of Al being x (0<x<1) formed on a substrate, an AlyGa1-yN barrier layer with a composition of Al being y (0<y≦̸1) formed on the channel layer, and source/drain electrodes and a gate electrode formed on the barrier layer, wherein the composition ratio y is larger than the composition ratio x. |
| 申请公布号 |
US2011316047(A1) |
申请公布日期 |
2011.12.29 |
| 申请号 |
US201113220024 |
申请日期 |
2011.08.29 |
| 申请人 |
NANJO TAKUMA;SUITA MUNEYOSHI;ABE YUJI;OISHI TOSHIYUKI;TOKUDA YASUNORI;MITSUBISHI ELECTRIC CORPORATION |
发明人 |
NANJO TAKUMA;SUITA MUNEYOSHI;ABE YUJI;OISHI TOSHIYUKI;TOKUDA YASUNORI |
| 分类号 |
H01L29/737 |
主分类号 |
H01L29/737 |
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