发明名称 METHOD OF FORMING CURRENT TRACKS ON SEMICONDUCTORS
摘要 <p>METHOD OF FORMING CURRENT TRACKS ON SEMICONDUCTORS AbstractMethods of making current tracks for semiconductors are disclosed. The methods involve selectively depositing a hot melt ink resist containing rosin resins and waxes on a silicon dioxide or silicon nitride layer coating a semiconductor followed by etching uncoated portions of the silicon dioxide or silicon nitride layer with an inorganic acid etch to expose the semiconductor and simultaneously inhibit undercutting of the hot melt ink resist. The etched portions may then be metallizaed to form a plurality of substantially uniform current tracks.NO FIGURE</p>
申请公布号 SG176381(A1) 申请公布日期 2011.12.29
申请号 SG20110035003 申请日期 2011.05.16
申请人 ROHM AND HAAS ELECTRONIC MATERIALS LLC 发明人 ROBERT K. BARR;HUA DONG
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