发明名称 FERROMAGNETIC-MATERIAL SPUTTERING TARGET
摘要 <p>FERROMAGNETIC MATERIAL SPUTTERING TARGETA ferromagnetic material sputtering target made of metal having a composition containing 20 mol% or less of Cr, and Co as the remainder thereof, wherein the structure of the target includes a metallic substrate (A), and, in the metallic substrate (A), a spherical phase (B) containing 90 wt% or more of Co in which the difference between the longest diameter and the shortest diameter is 0 to 50%, Provided is a ferromagnetic material sputtering target capable of improving the leakage magnetic flux to obtain a stable electrical discharge with a magnetronI0? sputtering device.Fig. 1</p>
申请公布号 SG175953(A1) 申请公布日期 2011.12.29
申请号 SG20110082203 申请日期 2010.09.30
申请人 JX NIPPON MINING & METALS CORPORATION 发明人 SATO ATSUSHI;ARAKAWA ATSUTOSHI
分类号 主分类号
代理机构 代理人
主权项
地址