| 摘要 |
<p>PURPOSE: A power semiconductor device is provided to suppress heat radiation corresponding to a current in the center of a substrate by flowing a current in the center of a substrate. CONSTITUTION: In a power semiconductor device, a semiconductor substrate(100A) comprises a resistance control structure The resistance of current is increasing in the central part of the semiconductor substrate. A semiconductor layer(110) has a first conductive type. A second semiconductor layer(200A) has a second conductive type. The second semiconductor layer is faced with the semiconductor layer. The impurity concentration of the second semiconductor layer is higher in the center than outer circumference. The resistance control structure comprises a second semiconductor layer.</p> |
