| 摘要 |
In a memory cell array, a plurality of memory cells connected to word lines and bit lines are arranged in a matrix. A storage section stores an initial value of a write voltage corresponding to a first write operation and a correction value for correcting the write voltage. A voltage generating circuit generates a word line write voltage in a first write operation or a second write operation on the basis of the initial value and correction value of the write voltage stored in the storage section. |
