| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a pattern forming method in which, in an immersion lithography process applying a protective film, a resist film surface is wetted with a 4-10C higher alcohol before coating with the protective film, so that the migration of resist additives to the protective film can be prevented to minimize a change in pattern profile, and the resist film surface is hydrophilized by slight surface roughing by the alcohol treatment to prevent the occurrence of blob defects and to reduce a dispense amount in coating with the protective film. <P>SOLUTION: The pattern forming method includes: a process of applying a photoresist material on a substrate; a process of wetting a formed photoresist film surface after heat treatment with a solution containing a 4-10C higher alcohol, and exposing the surface with a high energy line after coating with a protective film and heat treatment; and a process of performing development with a developer. <P>COPYRIGHT: (C)2009,JPO&INPIT |
