| 摘要 |
<p>As a barrier metal film, a Ti film or a Ta film is formed by sputtering method on a substrate. On top of this barrier metal film there is formed a nitride film by sputtering method. A Cu film is then formed on the nitride film by CVD method and thereafter anneal processing is performed at 100 to 400°C. In this manner, by forming the Cu film, the adhesiveness between the barrier metal film and the Cu film improves.</p> |
