METAL-OXIDE-SEMICONDUCTOR DEVICE INCLUDING A BURIED LIGHTLY-DOPED DRAIN REGION,申请号KR20040076311-传众专利搜索

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发明名称	METAL-OXIDE-SEMICONDUCTOR DEVICE INCLUDING A BURIED LIGHTLY-DOPED DRAIN REGION
摘要
申请公布号	KR101099907(B1)	申请公布日期	2011.12.28
申请号	KR20040076311	申请日期	2004.09.23
申请人		发明人
分类号	H01L29/78;H01L21/336;H01L23/58;H01L29/06;H01L29/08;H01L29/40;H01L29/417;H01L29/76;H01L31/062	主分类号	H01L29/78
代理机构		代理人
主权项
地址

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