发明名称 VARIABLE RESISTANCE ELEMENT, SEMICONDUCTOR DEVICE INCLUDING THE VARIABLE RESISTANCE ELEMENT, AND METHOD OF OPERATION THE SEMICONDUCTOR DEVICE
摘要 PURPOSE: A variable resistance element, a semiconductor device including the same, and a method for operating the semiconductor device are provided to improve the reliability of the semiconductor device including the same by increasing a resistance difference between a high resistance state and a low resistance state. CONSTITUTION: The first data is written in a semiconductor device by changing a variable resistance element from the first resistance state to the second resistance state by applying a reset pulse to the variable resistance element(1620). The second data is written in the semiconductor device by changing the variable resistance element from the second resistance state to the first resistance state by applying a set pulse to the variable resistance element. The size of a reset pulse is larger than the size of the set pulse. The second resistance state is larger than the first resistance state.
申请公布号 KR20110138927(A) 申请公布日期 2011.12.28
申请号 KR20100059108 申请日期 2010.06.22
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, YOUNG BAE;LEE, CHANG BUM;LEE, DONG SOO;KIM, CHANG JUNG;LEE, MYOUNG JAE;CHANG, MAN;LEE, SEUNG RYUL
分类号 G11C13/00;G11C7/20 主分类号 G11C13/00
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