发明名称 Circuit for testing internal voltage of semiconductor memory apparatus
摘要 An internal voltage test circuit of a semiconductor memory apparatus includes a comparing unit for comparing a level of internal voltage with a level of external voltage to output a comparison result as an output signal during a test mode, and an output selecting unit for outputting the output signal to a data output pad during the test mode, and outputting a data signal to the data output pad during a normal operation mode.
申请公布号 US8085056(B2) 申请公布日期 2011.12.27
申请号 US201113036985 申请日期 2011.02.28
申请人 SHIN YOON JAE;KIM JEE YUL;HYNIX SEMICONDUCTOR INC. 发明人 SHIN YOON JAE;KIM JEE YUL
分类号 G01R31/00;G01R31/26;G11C29/00 主分类号 G01R31/00
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