| 摘要 |
In a manufacturing method of a semiconductor device, an insulating film is formed on a first conductive film. By using a mask film having an opening that exposes the insulating film, anisotropic etching is performed to form a recess is formed in an upper part of the insulating film exposed to the opening and to cause a reaction product to adhere to a lower part of a sidewall portion of the mask film. Isotropic etching is then performed to decrease the sidewall portion of the mask film in a horizontal direction, and anisotropic etching is performed to etch the insulating film exposed at a bottom of the recess in a vertical direction while removing the reaction product adhering to the lower part of the sidewall portion of the mask film. Anisotropic etching is then performed to etch the insulating film present around the recess in the vertical direction to form a stepped portion, and also to etch the insulating film exposed at the bottom of the recess to expose the first conductive film. A second conductive film is then formed on the first conductive film. |
