发明名称 |
Magnetoresistance effect element having resistance adjusting layer and thin-film insertion layer |
摘要 |
A magnetoresistance effect element includes a magnetoresistance effect film including a magnetically pinned layer having a magnetic material film whose direction of magnetization is pinned substantially in one direction, a magnetically free layer having a magnetic material film whose direction of magnetization changes in response to an external magnetic field, and a nonmagnetic metal intermediate layer located between said pinned layer and said free layer. The element also includes a pair of electrodes electrically connected to the magnetoresistance effect film to supply a sense current perpendicularly to a film plane of the magnetoresistance effect film. At least one of the pinned layer and the free layer may include a thin-film insertion layer. The nonmagnetic metal intermediate layer includes a resistance adjusting layer including at least one of oxides, nitrides and fluorides, and the thin-film insertion layer includes at least one element selected from the group consisting of iron (Fe), cobalt (Co) and nickel (Ni). |
申请公布号 |
US8085511(B2) |
申请公布日期 |
2011.12.27 |
申请号 |
US20080236331 |
申请日期 |
2008.09.23 |
申请人 |
YUASA HIROMI;KAMIGUCHI YUZO;YOSHIKAWA MASATOSHI;KOUI KATSUHIKO;IWASAKI HITOSHI;NAGATA TOMOHIKO;SAKAKUBO TAKEO;SAHASHI MASASHI;KABUSHIKI KAISHA TOSHIBA |
发明人 |
YUASA HIROMI;KAMIGUCHI YUZO;YOSHIKAWA MASATOSHI;KOUI KATSUHIKO;IWASAKI HITOSHI;NAGATA TOMOHIKO;SAKAKUBO TAKEO;SAHASHI MASASHI |
分类号 |
G11B5/39;G01R33/09;G11B5/00;H01F10/30;H01F10/32;H01L29/82;H01L43/08;H01L43/10 |
主分类号 |
G11B5/39 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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