| 摘要 |
An undoped AlGaN layer 13 is formed on a buffer layer composed of a GaN series material formed on a semiconductor substrate, a drain electrode 15 and a source electrode 16 forming ohmic junction with the undoped AlGaN layer 13 are formed separately from each other on the undoped AlGaN layer 13. A gate electrode 17 composed of metal Ni and Au laminated in this order is formed between the drain electrodes 15 and the source electrode 16 on the undoped AlGaN layer 13. The end portion 17-2 of the gate electrode 17 is formed on the underlying metal 18 formed by a metal containing Ti via an insulating film 14 on a GaN buffer layer 12 surrounding the undoped AlGaN layer 13. |
