发明名称 |
Integrated circuit including a power MOS transistor |
摘要 |
An integrated circuit includes a first transistor having a first gate and a first source and a second transistor having a second gate and a second source. The integrated circuit includes a first source contact adjacent the second transistor and coupled to the first source and the second source. The integrated circuit includes a first bond wire coupled to the first source contact. |
申请公布号 |
US8084821(B2) |
申请公布日期 |
2011.12.27 |
申请号 |
US20080022679 |
申请日期 |
2008.01.30 |
申请人 |
DIBRA DONALD;KADOW CHRISTOPH;INFINEON TECHNOLOGIES AG |
发明人 |
DIBRA DONALD;KADOW CHRISTOPH |
分类号 |
H01L23/62 |
主分类号 |
H01L23/62 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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