发明名称 Integrated circuit including a power MOS transistor
摘要 An integrated circuit includes a first transistor having a first gate and a first source and a second transistor having a second gate and a second source. The integrated circuit includes a first source contact adjacent the second transistor and coupled to the first source and the second source. The integrated circuit includes a first bond wire coupled to the first source contact.
申请公布号 US8084821(B2) 申请公布日期 2011.12.27
申请号 US20080022679 申请日期 2008.01.30
申请人 DIBRA DONALD;KADOW CHRISTOPH;INFINEON TECHNOLOGIES AG 发明人 DIBRA DONALD;KADOW CHRISTOPH
分类号 H01L23/62 主分类号 H01L23/62
代理机构 代理人
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