发明名称 CAPACITORS WITH HIGH ENERGY STORAGE DENSITY AND LOW ESR
摘要 Electrostatic capacitors with high capacitance density and high-energy storage are implemented over conventional electrolytic capacitor anode substrates using highly conformal contact layers deposited by atomic layer deposition. Capacitor films that are suitable for energy storage, electrical and electronics circuits, and for integration onto PC boards endure long lifetime and high-temperature operation range.
申请公布号 US2011310526(A1) 申请公布日期 2011.12.22
申请号 US201113224123 申请日期 2011.09.01
申请人 SNEH ANAT;SNEH OFER;SUNDEW TECHNOLOGIES, LLC 发明人 SNEH ANAT;SNEH OFER
分类号 H01G4/30;H01G4/00;H01G7/00 主分类号 H01G4/30
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