发明名称 |
Phonon cell used in phonon accumulator or panel, consists of conversion layer containing specific compound semiconductor having band gap below preset value |
摘要 |
A phonon cell consists of conversion layer containing group II-IV compound semiconductor having band gap of less than 0.5 eV, preferably less than 0.3 eV. The semiconductor contains organic polymer with water content of 0.05-1.0 %mass. Independent claims are included for the following: (1) use of the phonon accumulator or panel to autonomous uninterrupted power supply; and (2) use of the organic polymer.
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申请公布号 |
DE102010053650(A1) |
申请公布日期 |
2011.12.22 |
申请号 |
DE20101053650 |
申请日期 |
2010.12.03 |
申请人 |
DRACHEV, ALEXANDER;PLATONOV, VLADIMIR |
发明人 |
DRACHEV, ALEXANDER, DR.;PLATONOV, VLADIMIR |
分类号 |
H01L51/42;H01L31/0304 |
主分类号 |
H01L51/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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