发明名称 Phonon cell used in phonon accumulator or panel, consists of conversion layer containing specific compound semiconductor having band gap below preset value
摘要 A phonon cell consists of conversion layer containing group II-IV compound semiconductor having band gap of less than 0.5 eV, preferably less than 0.3 eV. The semiconductor contains organic polymer with water content of 0.05-1.0 %mass. Independent claims are included for the following: (1) use of the phonon accumulator or panel to autonomous uninterrupted power supply; and (2) use of the organic polymer.
申请公布号 DE102010053650(A1) 申请公布日期 2011.12.22
申请号 DE20101053650 申请日期 2010.12.03
申请人 DRACHEV, ALEXANDER;PLATONOV, VLADIMIR 发明人 DRACHEV, ALEXANDER, DR.;PLATONOV, VLADIMIR
分类号 H01L51/42;H01L31/0304 主分类号 H01L51/42
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