| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent displacement in a vapor deposition pattern by bringing an expansion amount of a metal mask close to that of a substrate when one metal mask is used for one substrate. <P>SOLUTION: A metal mask device 100 with a support includes: a single metal mask 110 that physically covers a plurality of scribe lines 106 of a semiconductor substrate 102 with one sheet of a plate has a linear expansion coefficient different from that of the semiconductor substrate, has a plurality of predetermined patterns 112 as a plurality of through holes each of the patterns corresponding to each of a plurality of chips, respectively, and vapor-deposits metal on the semiconductor substrate thorough the thorough holes; a support 114 that has a linear expansion coefficient between the linear expansion coefficient of the metal mask and the linear expansion coefficient of the semiconductor substrate or the same linear expansion coefficient with that of the semiconductor substrate, and a lattice part 116 corresponding to at least a part of the scribe lines among the scribe lines; and a joined material that joins the metal mask and the support in at least a part of a region in the part of the scribe lines. <P>COPYRIGHT: (C)2012,JPO&INPIT |
