INSULATED GATE FIELD EFFECT TRANSISTOR

摘要

A MOSFET (1), which is capable of reducing on resistance by reducing channel mobility even when a gate voltage is high, includes: an n type substrate (11) made of SiC and having a main surface with an off angle of 50°-65° relative to a {0001} plane; an n type reverse breakdown voltage holding layer (13) made of SiC and formed on the main surface (11A) of the substrate (11); a p type well region (14) formed in the reverse breakdown voltage holding layer (13) distant away from a first main surface (13A) thereof; a gate oxide film (18) formed on the well region (14); an n type contact region (15) disposed between the well region (14) and the gate oxide film (18); a channel region (17) connecting the n type contact region (15) and the reverse breakdown voltage holding layer (13); and a gate electrode (20) disposed on the gate oxide film (18). In a region including an interface between the channel region (17) and the gate oxide film (18), a high-concentration nitrogen region (23) is formed.