| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device excellent in mass producibility and miniaturization, and to provide a method for producing the same. <P>SOLUTION: The semiconductor light-emitting device comprises: a semiconductor layer; a first electrode; a second electrode; a first insulating layer; a first wiring layer; a second wiring layer; a first metal pillar; a second metal pillar; and a second insulating layer. The semiconductor layer includes a first principal surface, a second principal surface formed opposite to the first principal surface, and a light-emitting layer. An end surface of a part of the first wiring layer is exposed from the first insulating layer or second insulating layer in a side direction, and all end surfaces of the second wiring layer are covered with the first insulating layer or the second insulating layer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
